US1JHE3_A/I
- MANUFACTURER
- Vishay Semiconductor Diodes Division
- PRODUCT CATEGORY
- Diodes - Rectifiers - Single
- Description
- DIODE GEN PURP 600V 1A DO214AC
- Per Unit
- $0.0884
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- Manufacturer :
- Vishay Semiconductor Diodes Division
- Product Category :
- Diodes - Rectifiers - Single
- Capacitance @ Vr, F :
- 10pF @ 4V, 1MHz
- Current - Average Rectified (Io) :
- 1A
- Current - Reverse Leakage @ Vr :
- 10µA @ 600V
- Diode Type :
- Standard
- Mounting Type :
- Surface Mount
- Operating Temperature - Junction :
- -55°C ~ 150°C
- Package / Case :
- DO-214AC, SMA
- Packaging :
- Tape & Reel (TR)
- Part Status :
- Active
- Reverse Recovery Time (trr) :
- 75ns
- Series :
- Automotive, AEC-Q101
- Speed :
- Fast Recovery = 200mA (Io)
- Supplier Device Package :
- DO-214AC (SMA)
- Voltage - DC Reverse (Vr) (Max) :
- 600V
- Voltage - Forward (Vf) (Max) @ If :
- 1.7V @ 1A
- Datasheet :
- US1JHE3_A/I
Cross References
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Lastest News
05/11/2022
05/11/2022
05/11/2022
05/11/2022
Search Part Number: "US1J" Included word is 15
| Part Number | Manufacturer | Stock | Description |
|---|---|---|---|
| US1JHE3/61T | Vishay Semiconductor Diodes Division | 2,493 | DIODE GEN PURP 600V 1A DO214AC |
| US1JHE3/61T | Vishay Semiconductor Diodes Division | 3,580 | DIODE GEN PURP 600V 1A DO214AC |
| US1JHE3/61T | Vishay Semiconductor Diodes Division | 909 | DIODE GEN PURP 600V 1A DO214AC |
| US1JHE3/5AT | Vishay Semiconductor Diodes Division | 2,265 | DIODE GEN PURP 600V 1A DO214AC |
| US1J/1 | Vishay Semiconductor Diodes Division | 1,525 | DIODE GEN PURP 600V 1A DO214AC |
| US1J-13 | Diodes Incorporated | 1,345 | DIODE GEN PURP 600V 1A SMA |
| US1J-13 | Diodes Incorporated | 1,048 | DIODE GEN PURP 600V 1A SMA |
| US1J-13 | Diodes Incorporated | 3,222 | DIODE GEN PURP 600V 1A SMA |
| US1JHR3G | Taiwan Semiconductor Corporation | 2,706 | DIODE GEN PURP 600V 1A DO214AC |
| US1J M2G | Taiwan Semiconductor Corporation | 3,486 | DIODE GEN PURP 600V 1A DO214AC |
| US1JDF-13 | Diodes Incorporated | 1,442 | DIODE GEN PURPOSE 600V 1A DFLAT |
| US1J-M3/61T | Vishay Semiconductor Diodes Division | 2,936 | DIODE GEN PURP 600V 1A DO214AC |
| US1J-M3/5AT | Vishay Semiconductor Diodes Division | 3,676 | DIODE GEN PURP 600V 1A DO214AC |
| US1JHE3_A/I | Vishay Semiconductor Diodes Division | 822 | DIODE GEN PURP 600V 1A DO214AC |
| US1JHE3_A/I | Vishay Semiconductor Diodes Division | 3,905 | DIODE GEN PURP 600V 1A DO214AC |
