RQJ0303PGDQA#H6

Manufacturer :

Renesas Electronics America

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

3.3A (Ta)

Drain to Source Voltage (Vdss) :

30V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

625pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Packaging :

Tape & Reel (TR)

Part Status :

Active

Power Dissipation (Max) :

800mW (Ta)

Rds On (Max) @ Id, Vgs :

68 mOhm @ 1.6A, 10V

Series :

-

Supplier Device Package :

3-MPAK

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

+10V, -20V

Vgs(th) (Max) @ Id :

-