VP2206N2

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

750mA (Tj)

Drain to Source Voltage (Vdss) :

60V

Drive Voltage (Max Rds On, Min Rds On) :

5V, 10V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

-

Input Capacitance (Ciss) (Max) @ Vds :

450pF @ 25V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-205AD, TO-39-3 Metal Can

Packaging :

Bulk

Part Status :

Active

Power Dissipation (Max) :

360mW (Tc)

Rds On (Max) @ Id, Vgs :

900 mOhm @ 3.5A, 10V

Series :

-

Supplier Device Package :

TO-39

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3.5V @ 10mA