IDC08D120T6MX1SA2
- MANUFACTURER
- Infineon Technologies
- PRODUCT CATEGORY
- Diodes - Rectifiers - Single
- Description
- DIODE GEN PURP 1.2KV 10A WAFER
- Per Unit
- $1.1850
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Diodes - Rectifiers - Single
- Capacitance @ Vr, F :
- -
- Current - Average Rectified (Io) :
- 10A
- Current - Reverse Leakage @ Vr :
- 2.7µA @ 1200V
- Diode Type :
- Standard
- Mounting Type :
- -
- Operating Temperature - Junction :
- -40°C ~ 175°C
- Package / Case :
- -
- Packaging :
- -
- Part Status :
- Active
- Reverse Recovery Time (trr) :
- -
- Series :
- -
- Speed :
- Standard Recovery >500ns, > 200mA (Io)
- Supplier Device Package :
- -
- Voltage - DC Reverse (Vr) (Max) :
- 1200V
- Voltage - Forward (Vf) (Max) @ If :
- 2.05V @ 10A
- Datasheet :
- IDC08D120T6MX1SA2
Cross References
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Lastest News
05/11/2022
05/11/2022
05/11/2022
05/11/2022
Search Part Number: "IDC0" Included word is 15
| Part Number | Manufacturer | Stock | Description |
|---|---|---|---|
| IDC08S60CEX7SA1 | Infineon Technologies | 944 | DIODE GEN PURPOSE SAWN WAFER |
| IDC08S60CEX1SA3 | Infineon Technologies | 2,380 | DIODE SIC 600V 8A SAWN WAFER |
| IDC08S60CEX1SA2 | Infineon Technologies | 2,053 | DIODE SIC 600V 8A SAWN WAFER |
| IDC05S60CEX1SA1 | Infineon Technologies | 3,470 | DIODE SIC 600V 5A SAWN WAFER |
| IDC04S60CEX7SA1 | Infineon Technologies | 1,965 | DIODE GEN PURPOSE SAWN WAFER |
| IDC04S60CEX1SA1 | Infineon Technologies | 2,408 | DIODE SIC 600V 4A SAWN WAFER |
| IDC08S120EX7SA1 | Infineon Technologies | 3,961 | DIODE SCHOTTKY 1.2KV 7.5A WAFER |
| IDC08S120EX1SA3 | Infineon Technologies | 1,129 | DIODE SCHOTTKY 1.2KV 7.5A WAFER |
| IDC05S120C5X1SA1 | Infineon Technologies | 868 | IC DIODE EMITTER CTLR WAFER |
