DMT10H015LCG-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

9.4A (Ta), 34A (Tc)

Drain to Source Voltage (Vdss) :

100V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

33.3nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

1871pF @ 50V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 155°C (TJ)

Package / Case :

8-VDFN Exposed Pad

Packaging :

Tape & Reel (TR)

Part Status :

Active

Power Dissipation (Max) :

1W (Ta)

Rds On (Max) @ Id, Vgs :

15 mOhm @ 20A, 10V

Series :

-

Supplier Device Package :

V-DFN3333-8

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3.5V @ 250µA