BYG10DHE3_A/I
- MANUFACTURER
- Vishay Semiconductor Diodes Division
- PRODUCT CATEGORY
- Diodes - Rectifiers - Single
- Description
- DIODE AVALANCHE 200V 1.5A DO214
- Per Unit
- $0.1038
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- Manufacturer :
- Vishay Semiconductor Diodes Division
- Product Category :
- Diodes - Rectifiers - Single
- Capacitance @ Vr, F :
- -
- Current - Average Rectified (Io) :
- 1.5A
- Current - Reverse Leakage @ Vr :
- 1µA @ 200V
- Diode Type :
- Avalanche
- Mounting Type :
- Surface Mount
- Operating Temperature - Junction :
- -55°C ~ 150°C
- Package / Case :
- DO-214AC, SMA
- Packaging :
- Tape & Reel (TR)
- Part Status :
- Active
- Reverse Recovery Time (trr) :
- 4µs
- Series :
- Automotive, AEC-Q101
- Speed :
- Standard Recovery >500ns, > 200mA (Io)
- Supplier Device Package :
- DO-214AC (SMA)
- Voltage - DC Reverse (Vr) (Max) :
- 200V
- Voltage - Forward (Vf) (Max) @ If :
- 1.15V @ 1.5A
- Datasheet :
- BYG10DHE3_A/I
Cross References
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Lastest News
05/11/2022
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05/11/2022
Search Part Number: "BYG1" Included word is 15
| Part Number | Manufacturer | Stock | Description |
|---|---|---|---|
| BYG10Y-M3/TR3 | Vishay Semiconductor Diodes Division | 3,206 | DIODE AVALANCHE 1.6KV 1.5A |
| BYG10MHE3_A/I | Vishay Semiconductor Diodes Division | 654 | DIODE AVALANCHE 1KV 1.5A DO214AC |
| BYG10MHE3_A/H | Vishay Semiconductor Diodes Division | 2,098 | DIODE AVALANCHE 1KV 1.5A DO214AC |
| BYG10K-E3/TR | Vishay Semiconductor Diodes Division | 2,150 | DIODE AVALANCHE 800V 1.5A |
| BYG10M-E3/TR3 | Vishay Semiconductor Diodes Division | 1,488 | DIODE AVALANCHE 1KV 1.5A |
| BYG10K-E3/TR3 | Vishay Semiconductor Diodes Division | 3,190 | DIODE AVALANCHE 800V 1.5A |
| BYG10J-E3/TR3 | Vishay Semiconductor Diodes Division | 1,221 | DIODE AVALANCHE 600V 1.5A |
| BYG10G-E3/TR3 | Vishay Semiconductor Diodes Division | 3,038 | DIODE AVALANCHE 400V 1.5A |
| BYG10KHE3_A/I | Vishay Semiconductor Diodes Division | 3,943 | DIODE AVALANCHE 800V 1.5A DO214 |
| BYG10KHE3_A/H | Vishay Semiconductor Diodes Division | 2,166 | DIODE AVALANCHE 800V 1.5A DO214 |
| BYG10JHE3_A/I | Vishay Semiconductor Diodes Division | 1,647 | DIODE AVALANCHE 600V 1.5A DO214 |
| BYG10JHE3_A/H | Vishay Semiconductor Diodes Division | 3,014 | DIODE AVALANCHE 600V 1.5A DO214 |
| BYG10GHE3_A/I | Vishay Semiconductor Diodes Division | 3,314 | DIODE AVALANCHE 400V 1.5A DO214 |
| BYG10GHE3_A/H | Vishay Semiconductor Diodes Division | 1,528 | DIODE AVALANCHE 400V 1.5A DO214 |
| BYG10DHE3_A/H | Vishay Semiconductor Diodes Division | 1,502 | DIODE AVALANCHE 200V 1.5A DO214 |
