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TK290P60Y,RQ

MANUFACTURER
Toshiba Semiconductor and Storage
PRODUCT CATEGORY
Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 600V 11.5A DPAK
Per Unit
$1.2450

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Manufacturer :
Toshiba Semiconductor and Storage
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
11.5A (Tc)
Drain to Source Voltage (Vdss) :
600V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
730pF @ 300V
Mounting Type :
Surface Mount
Operating Temperature :
150°C (TJ)
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging :
Cut Tape (CT)
Part Status :
Active
Power Dissipation (Max) :
100W (Tc)
Rds On (Max) @ Id, Vgs :
290 mOhm @ 5.8A, 10V
Series :
DTMOSV
Supplier Device Package :
DPAK
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±30V
Vgs(th) (Max) @ Id :
4V @ 450µA
Datasheet :
TK290P60Y,RQ

Cross References

  • Toshiba Semiconductor and Storage
    MOSFET N-CH 600V 11.5A TO220SIS
  • Toshiba Semiconductor and Storage
    MOSFET N-CH 650V 11.5A TO220SIS
  • Toshiba Semiconductor and Storage
    MOSFET N-CH 600V 11.5A DPAK
  • Toshiba Semiconductor and Storage
    MOSFET N-CH 600V 11.5A DPAK
  • Toshiba Semiconductor and Storage
    MOSFET N-CH 650V 11.5A DPAK

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Part Number Manufacturer Stock Description
TK290A60Y,S4X Toshiba Semiconductor and Storage 2,351 MOSFET N-CH 600V 11.5A TO220SIS
TK290A65Y,S4X Toshiba Semiconductor and Storage 2,175 MOSFET N-CH 650V 11.5A TO220SIS
TK290P60Y,RQ Toshiba Semiconductor and Storage 3,717 MOSFET N-CH 600V 11.5A DPAK
TK290P60Y,RQ Toshiba Semiconductor and Storage 3,198 MOSFET N-CH 600V 11.5A DPAK
TK290P65Y,RQ Toshiba Semiconductor and Storage 3,528 MOSFET N-CH 650V 11.5A DPAK
TK290P65Y,RQ Toshiba Semiconductor and Storage 1,477 MOSFET N-CH 650V 11.5A DPAK
TK290P65Y,RQ Toshiba Semiconductor and Storage 2,152 MOSFET N-CH 650V 11.5A DPAK

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