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TK12A60W,S4VX

MANUFACTURER
Toshiba Semiconductor and Storage
PRODUCT CATEGORY
Transistors - FETs, MOSFETs - Single
Description
MOSFET N CH 600V 11.5A TO-220SIS
Per Unit
$2.7752

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Manufacturer :
Toshiba Semiconductor and Storage
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
11.5A (Ta)
Drain to Source Voltage (Vdss) :
600V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
Super Junction
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
890pF @ 300V
Mounting Type :
Through Hole
Operating Temperature :
150°C (TJ)
Package / Case :
TO-220-3 Full Pack
Packaging :
Tube
Part Status :
Active
Power Dissipation (Max) :
35W (Tc)
Rds On (Max) @ Id, Vgs :
300 mOhm @ 5.8A, 10V
Series :
DTMOSIV
Supplier Device Package :
TO-220SIS
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±30V
Vgs(th) (Max) @ Id :
3.7V @ 600µA
Datasheet :
TK12A60W,S4VX

Cross References

  • Toshiba Semiconductor and Storage
    MOSFET N CH 600V 11.5A 5DFN
  • Toshiba Semiconductor and Storage
    MOSFET N CH 600V 11.5A 5DFN
  • Toshiba Semiconductor and Storage
    MOSFET N CH 600V 11.5A 5DFN
  • Toshiba Semiconductor and Storage
    MOSFET N CH 600V 11.5A IPAK
  • Toshiba Semiconductor and Storage
    MOSFET N CH 600V 11.5A DPAK

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TK12V60W,LVQ Toshiba Semiconductor and Storage 1,470 MOSFET N CH 600V 11.5A 5DFN
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TK12E60W,S1VX Toshiba Semiconductor and Storage 1,344 MOSFET N CH 600V 11.5A TO-220
TK12A60D(STA4,Q,M) Toshiba Semiconductor and Storage 2,396 MOSFET N-CH 600V 12A TO-220SIS

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