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HN1B04F(TE85L,F)

MANUFACTURER
Toshiba Semiconductor and Storage
PRODUCT CATEGORY
Transistors - Bipolar (BJT) - Arrays
Description
TRANS NPN/PNP 30V 0.5A SM6

NO PRICE

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Manufacturer :
Toshiba Semiconductor and Storage
Product Category :
Transistors - Bipolar (BJT) - Arrays
Current - Collector (Ic) (Max) :
500mA
Current - Collector Cutoff (Max) :
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce :
70 @ 100mA, 1V
Frequency - Transition :
200MHz
Mounting Type :
Surface Mount
Operating Temperature :
150°C (TJ)
Package / Case :
SC-74, SOT-457
Packaging :
Cut Tape (CT)
Part Status :
Obsolete
Power - Max :
300mW
Series :
-
Supplier Device Package :
SM6
Transistor Type :
NPN, PNP
Vce Saturation (Max) @ Ib, Ic :
250mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max) :
30V
Datasheet :
HN1B04F(TE85L,F)

Cross References

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HN1B01FU-Y(L,F,T) Toshiba Semiconductor and Storage 2,982 TRANS NPN/PNP 50V 0.15A US6
HN1B04FE-Y,LF Toshiba Semiconductor and Storage 1,393 TRANS NPN/PNP 50V 0.15A ES6
HN1B04FE-Y,LF Toshiba Semiconductor and Storage 3,622 TRANS NPN/PNP 50V 0.15A ES6
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HN1B01F-GR(TE85L,F Toshiba Semiconductor and Storage 2,830 TRANS NPN/PNP 50V 0.15A SM6
HN1B01F-GR(TE85L,F Toshiba Semiconductor and Storage 1,531 TRANS NPN/PNP 50V 0.15A SM6
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HN1B04F(TE85L,F) Toshiba Semiconductor and Storage 1,624 TRANS NPN/PNP 30V 0.5A SM6
HN1B04FE-GR,LF Toshiba Semiconductor and Storage 3,481 TRANS NPN/PNP 50V 0.15A ES6

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