RW1E014SNT2R

Manufacturer :

Rohm Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

1.4A (Ta)

Drain to Source Voltage (Vdss) :

30V

Drive Voltage (Max Rds On, Min Rds On) :

4V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

1.4nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds :

70pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

SOT-563, SOT-666

Packaging :

Tape & Reel (TR)

Part Status :

Active

Power Dissipation (Max) :

700mW (Ta)

Rds On (Max) @ Id, Vgs :

240 mOhm @ 1.4A, 10V

Series :

-

Supplier Device Package :

6-WEMT

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.5V @ 1mA