IDC08S60CEX1SA2
- MANUFACTURER
- Infineon Technologies
- PRODUCT CATEGORY
- Diodes - Rectifiers - Single
- Description
- DIODE SIC 600V 8A SAWN WAFER
NO PRICE
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Diodes - Rectifiers - Single
- Capacitance @ Vr, F :
- 310pF @ 1V, 1MHz
- Current - Average Rectified (Io) :
- 8A (DC)
- Current - Reverse Leakage @ Vr :
- 100µA @ 600V
- Diode Type :
- Silicon Carbide Schottky
- Mounting Type :
- Surface Mount
- Operating Temperature - Junction :
- -55°C ~ 175°C
- Package / Case :
- Die
- Packaging :
- Bulk
- Part Status :
- Obsolete
- Reverse Recovery Time (trr) :
- 0ns
- Series :
- thinQ!™
- Speed :
- No Recovery Time > 500mA (Io)
- Supplier Device Package :
- Die
- Voltage - DC Reverse (Vr) (Max) :
- 600V
- Voltage - Forward (Vf) (Max) @ If :
- 1.7V @ 8A
- Datasheet :
- IDC08S60CEX1SA2
Cross References
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Lastest News
05/11/2022
05/11/2022
05/11/2022
05/11/2022
Search Part Number: "IDC0" Included word is 15
| Part Number | Manufacturer | Stock | Description |
|---|---|---|---|
| IDC08S60CEX7SA1 | Infineon Technologies | 944 | DIODE GEN PURPOSE SAWN WAFER |
| IDC08S60CEX1SA3 | Infineon Technologies | 2,380 | DIODE SIC 600V 8A SAWN WAFER |
| IDC05S60CEX1SA1 | Infineon Technologies | 3,470 | DIODE SIC 600V 5A SAWN WAFER |
| IDC04S60CEX7SA1 | Infineon Technologies | 1,965 | DIODE GEN PURPOSE SAWN WAFER |
| IDC04S60CEX1SA1 | Infineon Technologies | 2,408 | DIODE SIC 600V 4A SAWN WAFER |
| IDC08S120EX7SA1 | Infineon Technologies | 3,961 | DIODE SCHOTTKY 1.2KV 7.5A WAFER |
| IDC08S120EX1SA3 | Infineon Technologies | 1,129 | DIODE SCHOTTKY 1.2KV 7.5A WAFER |
| IDC05S120C5X1SA1 | Infineon Technologies | 868 | IC DIODE EMITTER CTLR WAFER |
| IDC08D120T6MX1SA2 | Infineon Technologies | 1,466 | DIODE GEN PURP 1.2KV 10A WAFER |
